Recently, Foshan Guoxing Optoelectronics Co., Ltd. (Nationstar) officially released NS-CSP 1010 series chip size package (CSP) high-power LED device, which uses the most advanced ceramic film substrate (C-TFS) The package architecture enables high-compact LED packaging for backlighting, high-density lighting, projection equipment, high-end indications, etc. It is expected to be available in the second quarter of 2015.
NS-CSP 1010 series is one of the world's smallest watt-level power CSP LED devices. The peak power is 3.5W, the size is only 1.0*1.0*0.4, the luminous efficiency is 130lm/W@6000K, and the thermal resistance of the device is ≤5K. /W.
In the existing flip chip or unpackaged device, the chip light emitting region (epitaxial layer) is usually located under the sapphire, and is a brittle fragile material with a thickness of only (5-7 μm), and the external stress is directly transmitted to the inside of the chip. The epitaxial layer is cracked, which leads to leakage or short circuit of the chip. This type of failure is quite different between the LED chip and the external circuit material expansion coefficient (CET), especially when the LED chip is directly mounted on the metal core circuit board (MCPCB) (GaN CTE is about 5ppm/K, MCPCB CTE18~). 23ppm/K).
Guoxing Optoelectronics NS-CSP 1010 series LED devices use the exclusive patented ceramic film substrate technology (C-TFS) to crystallize the flip chip on a precision ceramic film with a thickness of only 50~80μm, using ceramic high strength and low expansion. The coefficient characteristic buffers the epitaxial layer of the chip and the external circuit to achieve high-endurance work of the CSP device. At the same time, the thin film ceramic effectively shortens the distance between the chip and the external heat flow channel, and offsets the decrease in thermal diffusion performance caused by the reduction of the substrate size. Finally, the ceramic substrate effectively supports the phosphor layer on the side of the chip, which greatly reduces the possibility of the phosphor layer falling off, and further improves the airtightness of the device. (This article is based on Guoxing Optoelectronics submission)
Figure 1 National Star Optoelectronics NS-CSP 1010 Series LED Devices and Their Array Modules
NS-CSP 1010 series is one of the world's smallest watt-level power CSP LED devices. The peak power is 3.5W, the size is only 1.0*1.0*0.4, the luminous efficiency is 130lm/W@6000K, and the thermal resistance of the device is ≤5K. /W.
In the existing flip chip or unpackaged device, the chip light emitting region (epitaxial layer) is usually located under the sapphire, and is a brittle fragile material with a thickness of only (5-7 μm), and the external stress is directly transmitted to the inside of the chip. The epitaxial layer is cracked, which leads to leakage or short circuit of the chip. This type of failure is quite different between the LED chip and the external circuit material expansion coefficient (CET), especially when the LED chip is directly mounted on the metal core circuit board (MCPCB) (GaN CTE is about 5ppm/K, MCPCB CTE18~). 23ppm/K).
Figure 2 is a schematic diagram of the direct failure of the LED flip chip and the MCPCB (a),
Guoxing Optoelectronics C-TFS CSP LED package architecture effectively avoids stress failure (b)
Guoxing Optoelectronics NS-CSP 1010 series LED devices use the exclusive patented ceramic film substrate technology (C-TFS) to crystallize the flip chip on a precision ceramic film with a thickness of only 50~80μm, using ceramic high strength and low expansion. The coefficient characteristic buffers the epitaxial layer of the chip and the external circuit to achieve high-endurance work of the CSP device. At the same time, the thin film ceramic effectively shortens the distance between the chip and the external heat flow channel, and offsets the decrease in thermal diffusion performance caused by the reduction of the substrate size. Finally, the ceramic substrate effectively supports the phosphor layer on the side of the chip, which greatly reduces the possibility of the phosphor layer falling off, and further improves the airtightness of the device. (This article is based on Guoxing Optoelectronics submission)
Encapsulated Transformers, also commonly referred to as Enclosed Transformers or Sealed Transformers, are electrical devices that are designed to be encapsulated or enclosed within a protective housing or case. This encapsulation provides various benefits, including enhanced safety, improved environmental resistance, and reduced maintenance requirements.
Key Applications of Encapsulated Transformers
Safety Enhancement:
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Environmental Resistance:
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Reduced Maintenance:
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Power Distribution:
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Electronic Equipment:
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Renewable Energy Systems:
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Conclusion
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