Principle of IGBT drive protection circuit based on 2SD315

LC03-3.3 SOP8 TVS Static Protection 3.3V

Overview:
How the existing IGBT technology level can maximize its function is a major and critical issue. This article takes eupec's IGBT model FF450R17ME3 as an example to illustrate its high integration, high reliability and high efficiency.

1 Introduction
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar power tube, is a composite full-controlled voltage-driven power electronic device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). The advantages of both the high input impedance of the MOSFET and the low turn-on voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, with low drive power and reduced saturation voltage, making it the device of choice for today's power electronics industry.
The development level of power electronic devices largely determines the development level of power electronic products. At present, the limitation of voltage and current levels of power electronic devices has become a bottleneck in the development of power electronics and electric drive industry, and IGBT is one of them. How to maximize its function at the existing IGBT technology level is a major and critical issue. In addition to reasonable software control methods, the IGBT drive protection circuit is another important link. At present, there are many control and protection circuits for IGBTs, but they are not perfect in terms of integration and reliability. This paper introduces an IGBT drive protection circuit based on CONCEPT's 2SD315 module based on the basic performance of IGBT.
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