The semiconductor industry is a technology that originated abroad, and many related technical terms are expressed in English. And because many practitioners have overseas experience, or they are accustomed to expressing related process and technical nodes in English, it causes many English terms to be translated into Chinese, and many people cannot compare them, or do not know how to translate. Here we have compiled the Chinese and English versions of some commonly used semiconductor terms, and I hope it will be helpful to everyone. If there is an error, please help to correct it, thank you!
Commonly used semiconductor Chinese-English comparison table
Ion implanter
LSS theory LindhandScharffandSchiotttheory, also known as "Linhand-Scharff-Schiott theory".
Channelingeffect
Range distribution
Depthdistribution
Projectedrange
Stopping distance
Stopping power
Standardstoppingcrosssection
Annealing
Activationenergy
Isothermal annealing
Laser annealing
Stress-induced defect
Preferred orientation
Mask-makingtechnology
Patterndistortion
Firstminification
Finalminification
Mastermask
Chromiumplate
Dryplate
Emulsionplate
See-throughplate
High resolution version highresolutionplate, HRP
Plateforultra-microminiaturization
Mask
Mask alignment
Alignmentprecision
Photoresist photoresist, also known as "photoresist".
Negative photoresist
Positive photoresist
Inorganic resist
Multilevelresist
Electron beam resist
X-ray photoresist X-rayresist
Scrubbing
Spinning
Photoresistcoating
Postbaking
Photolithography
X-ray lithography X-raylithography
Electron beam lithography
Ion beam lithography
Deep-UVlithography
Lithography machine maskaligner
Projection maskaligner
Exposure
Contactexposuremethod
Proximity exposure method
Optical projection exposure method
Electron beam exposure system electronbeamexposuresystem
Step-and-repeat system
Development
Linewidth
Strippingofphotoresist
Removingofphotoresistbyoxidation
Removingofphotoresistbyplasma
Etching
Dry etching
Reactive ion etching, RIE
Isotropic etching
Anisotropic etching
Reactive sputter etching
Ion milling ion beammilling, also known as "ion milling".
Plasmaetching
Undercutting
Lift-off technology, also known as "floating off technology".
Endpointmonitoring
Metallization
Interconnection
Multilevelmetallization
Electromigration
Reflow
Phosphorusilicateglass
Boron-phosphorosilicateglass
Passivation technology
Multilayer dielectric passivation
Scribing
Electron beam slicing
Sintering
Indentation
Thermocompressionbonding
Thermosonic bonding
Coldwelding
Spotwelding
Ballbonding
Wedgebonding
Inner lead bonding
Outer lead bonding
Beamlead
Mountingtechnology
Adhesion
Packaging
Metallicpackaging
Ceramic packaging
Flatpackaging
Plasticpackage
Glasspackaging
Micropackaging, also known as "micropackaging".
Shell package
Die
Leadbonding
Leadframe bonding
Tapeautomatedbonding, TAB
Laser bonding
Ultrasonic bonding
Infraredbonding
A collection of microelectronic dictionaries
(In alphabetical order)
A
Abruptjunction
Accelerated testing
Acceptor
Acceptoratom
Accumulation accumulation, accumulation
Accumulatingcontact
Accumulationregion
Accumulationlayer accumulation layer
Activeregion
Activecomponent
Activedevice active device
Activation
Activationenergy activation energy
Activeregion active (amplified) region
Admittance
Allowedband
Alloy-junctiondevice
Alloy junction device Aluminum (Aluminium) aluminum
Aluminum--oxide
Aluminumpassivation
Ambipolar
Ambienttemperature
Amorphous
Amplifier power amplifier loudspeaker amplifier
Analogue (Analog) comparator analog comparator Angstrom Angstrom
Anneal
Anisotropic
Anode
Arsenic (AS)
Auger
Augerprocess Auger process
Avalanche avalanche
Avalanchebreakdown
Avalancheexcitation
B
Backgroundcarrier
Backgrounddoping
Backward
Backwardbias
Ballastingresistor
Ballbond
Band band
Bandgap band gap
Barrier
Barrierlayer barrier layer
Barrierwidth Barrier width
Base
Basecontact
Basestretching base area expansion effect
Basetransittime Base transit time
Basetransportefficiency base area transport coefficient
Base-widthmodulation
Basisvector basis vector
Bias
Bilateralswitch
Binarycode binary code
Binarycompoundsemiconductor
Bipolar
BipolarJunctionTransistor (BJT) bipolar transistor
Bloch
Blockingband
Blockingcontact
Body-centered
Body-centredcubicstructure
Boltzmann
Bond bond, bonding
Bondingelectron Valence Electron
Bondingpad bonding point
Bootstrapcircuit bootstrap circuit
Bootstrappedemitterfollower bootstrapped emitter follower
Boron
Borosilicateglass
Boundarycondition
Boundelectron bound electron
Breadboard simulation board, experiment board
Breakdown
Breakover turn
Brillouin
Brillouinzone
Built-in
Build-inelectricfield
Bulk body/Bulkabsorption body absorption
Bulkgeneration body generation
Bulkrecombination body compound
Burn-in aging
Burnout
Buriedchannel
Buried diffusion region
C
Can shell
Capacitance
Capturecrosssection
Capturecarrier captures carriers
Carrier carrier, carrier
Carrybit
Carry-inbit carry input
Carry-outbit carry output
Cascade cascade
Case
Cathode
Center
Ceramic
Channel
Channel breakdown
Channel current
Channeldoping
Channelshortening
Channelwidth
Characteristicimpedance
Charge, charge
Charge-compensation effects
Chargeconservation
Chargeneutralitycondition
Chargedrive/exchange/sharing/transfer/storage
Chemmicaletching chemical etching method
Chemically-Polish chemical polishing
Chemmically-Mechanically Polish (CMP) chemical mechanical polishing Chip chip
Chipyield chip yield
Clamped
Clampingdiode
Cleavageplane
Clockrate clock frequency
Clockgenerator clock generator
Clockflip-flop clock flip-flop
Close-packed structure
Close-loop gain
Collector
Collision
CompensatedOP-AMP Compensated Op Amp
Common-base/collector/emitterconnection common base/collector/emitter connection
Common-gate/drain/sourceconnection Common-gate/drain/source connection
Common-mode gain
Common-mode input
Common-mode rejection ratio (CMRR)
Compatibility
Compensation
Compensatedimpurities
Compensated semiconductor
Complementary Darlington circuit Complementary Darlington circuit
ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)
Complementary metal oxide semiconductor field effect transistor
Complementaryerrorfunction
Computer-aideddesign(CAD)/test(CAT)/manufacture(CAM)
Make
Compound Semiconductor
Conductance
Conductionband (edge)
Conductionlevel/state
Conductor
Conductivity
Configuration
Conlomb Coulomb
ConpledConfigurationDevices structure configuration
Constants physical constants
Constantenergysurface
Constant-sourcediffusion
Contact
Contamination
Continuityequation
Contacthole
Contactpotential
Continuitycondition
Contradoping
Controlled
Converter
Conveyer transmitter
Copper interconnection system
Couping
Covalent
Crossover
Critical
Crossunder
Crucible
Crystaldefect/face/orientation/lattice
grid
Currentdensity
Curvature
Cutoff cutoff
Currentdrift/dirve/sharing
CurrentSense current sampling
Curvature
Custom integrated circuit
Cylindrical
Czochralshicrystal vertical single crystal
Czochralskitechnique Czochralskitechnique (Cz method Czochralski crystal J)
D
Danglingbonds Dangling Bond
Darkcurrent
Deadtime
Debyelength
De.broglie
Decderate
Decibel (dB) decibel
Decode
Deepacceptorlevel is deeply affected by the main energy level
Deepdonorlevel
Deepimpuritylevel
Deeptrap
Defeat defect
Degeneratesemiconductor
Degeneracy degree
Degradation
DegreeCelsius(centigrade)/Kelvin Celsius/Kelvin
Delay Density
Densityofstates
Depletion exhaustion
Depletion approximation
Depletioncontact
Depletiondepth
Depletioneffect
Depletionlayer depletion layer
DepletionMOS depletion MOS
Depletionregion
Depositedfilm
Deposition process
Designrules
Die chip (plural dice)
Diode diode
Dielectric
Dielectricisolation
Difference-mode input
Differentialamplifier
Differentialcapacitance
Diffusedjunction
Diffusion
Diffusioncoefficient
Diffusionconstant
Diffusivity
Diffusioncapacitance/barrier/current/furnace
Digitalcircuit
Dipoledomain
Dipolelayer
Direct-coupling
Direct-gapsemiconductor
Directtransition
Discharge
Discretecomponent
Dissipation
Distribution
Distributedcapacitance
Distributedmodel
Displacement displacement
Donor Donor
Donorexhaustion
Dopant dopant
Doped semiconductor
Dopingconcentration
Double-diffusiveMOS (DMOS) double-diffusive MOS.
Drift drift Driftfield drift electric field
Driftmobility migration rate
Dryetching
Dry/wetoxidation dry/wet oxidation
Dose dose
Dutycycle duty cycle
Dual-in-linepackage (DIP) dual-in-line package
Dynamics
Dynamiccharacteristics
Dynamicimpedance
E
Earlyeffect
Earlyfailure
Effectivemass
Einsteinrelation(ship)
ElectricEraseProgrammableReadOnlyMemory (E2PROM) one-time electrically erasable read-only memory
Electrode
Electrominggratim
Electronaffinity electron affinity
Electronic-grade
Electron-beamphoto-resistexposure photoresist electron beam exposure
Electrongas
Electron-gradewater electronic grade pure water
Electrontrappingcenter
ElectronVolt(eV)
Electrostatic
Element element/component/accessory
Elementalsemiconductor
Ellipse
Ellipsoid ellipsoid
Emitter
Emitter-coupledlogic
Emitter-coupledpair
Emitterfollower follower
Emptyband
Emittercrowdingeffect emitter edge (crowding) effect
Endurancetest=lifetest
Energystate
Energymomentumdiagram energy-momentum (EK) diagram
Enhancementmode enhanced mode
EnhancementMOS
MOSEntefic (low) eutectic
Environmentaltest
Epitaxial
Epitaxial layer
Epitaxialslice epitaxial wafer
Expitaxy
Equivalentcurcuit equivalent circuit
Equilibriummajority/minoritycarriers balance majority/minority carriers
ErasableProgrammableROM (EPROM) can access (program) memory
Errorfunctioncomplement
Etch etching
Etchant etchant
Etchingmask resist mask
Excesscarrier
Excitationenergy
Excited state
Exciton
Extrapolation
Extrinsic
Extrinsicsemiconductor impurity semiconductor
F
Face-centered
Falltime
Fan-in
Fan-out
Fastrecovery
Fastsurfacestates
Feedback
Fermilevel
Fermi-DiracDistribution
Femipotential
Fickequation Fick equation (diffusion)
Fieldeffecttransistor
Fieldoxide
Filledband
Film
Flashmemory flash memory
Flatband
Flatpack
Flickernoise (change) noise
Flip-floptoggle flip-flop
Floatinggate
Fluorideetch hydrogen fluoride etching
Forbiddenband
Forwardbias
Forwardblocking/conducting
Frequencydeviationnoise
Frequencyresponse frequency response
Function function
G
Gain Gain Gallium-Arsenide (GaAs) Potassium Arsenide
Gamyrayr rays
Gate gate, gate, control pole
Gate oxide
Gauss (ian) Gauss
Gaussiandistributionprofile Gaussian doping profile
Generation-recombination
Geometries geometric dimensions
Germanium (Ge) Germanium
Graded
Graded(gradual)channel
Gradedjunction
Grain
Gradient
Grownjunction
Guardring
Gummel-Poommodel
Gunn-effect Dirichlet effect
H
Hardeneddevice Radiation Hardened Device
Heatofformation
Heatsink radiator, heat sink
Heavy/lightholeband
Heavysaturation
Hell-effect Hall effect
Heterojunction
Heterojunctionstructure
HeterojunctionBipolarTransistor (HBT) heterojunction bipolar crystal
Highfieldproperty
High-performanceMOS.(H-MOS) high performance
MOS.Hormalized normalization
Horizontal epitaxial reactor
Hotcarrior
Hybridintegration
I
Image-force
Impactionization
Impedance
Imperfectstructure incomplete structure
Implantation dose
Implantedion
Impurity
Impurityscattering magazine scattering
Incrementalresistance resistance increment (differential resistance)
In-contactmask contact mask
Indiumtinoxide (ITO)
Inducedchannel
Infrared
Injection
Inputoffsetvoltage Input offset voltage
Insulator
InsulatedGateFET (IGFET) insulated gate
FETIntegratedinjectionlogic integrated injection logic
Integration integration, integration
Interconnection
Interconnectiontimedelay Interconnection delay
Interdigitatedstructure
Interface interface
Interference
International system of unions
Internallyscattering
Interpolation
Intrinsic
Intrinsicsemiconductor
Inverseoperation
Inversion inversion
Inverter
Ion ion
Ionbeam ion beam
Ionetching ion etching
Ionimplantation ion implantation
Ionization
Ionizationenergy
Irradiation
Isolationland
Isotropic
J
JunctionFET (JFET) junction field effect transistor
Junctionisolation junction isolation
Junctionspacing
Junctionside-wall
L
Latchup
Lateral
Lattice lattice
Layout
Latticebinding/cell/constant/defect/distortion Lattice binding force/unit cell/lattice/lattice Changshu
/Lattice Defects/Lattice Distortion
Leakagecurrent (leakage) leakage current
Levelshifting
Lifetime
linearity
Linkedbond covalent bond
LiquidNitrogen
Liquid-phase epitaxial growth technique
Lithography
LightEmittingDiode (LED)
LoadlineorVariable load line
Locating and Wiring layout and routing
Longitudinal
Logicswing logic swing
Lorentz
Lumpedmodel Lumped model
M
Majoritycarrier
Mask mask, lithography
Masklevel mask number
Maskset mask set
Mass-actionlaw mass conservation law
Master-slaveDflip-flop
Matching
Maxwell
Meanfreepath
Meanderedemitterjunction comb emitter junction
Meantimebeforefailure (MTBF) average working time
Megeto-resistance magnetoresistance
Mesa countertop
MESFET-MetalSemiconductor Metal Semiconductor FET
Metallization
Microelectronictechnique
Microelectronics
Millenindices Millenindices
Minoritycarrier
Misfit mismatch
Mismatching
Mobileions
Mobility mobility
Module module
Modulate modulation
Molecularcrystal
MonolithicIC Monolithic ICMOSFET Metal Oxide Semiconductor Field Effect Transistor
Mos.Transistor(MOST)MOS.Transistor
Multiplication
Modulator modulation
Multi-chipIC Multi-chip IC
Multi-chipmodule (MCM) multi-chip module
Multiplicationcoefficient
N
Nakedchip unpackaged chip (die)
Negativefeedback
Negativeresistance
Nesting
Negative-temperature-coefficient
Noisemargin
Nonequilibrium unbalanced
Nonrolatile non-volatile (volatile)
Normallyoff/on
Numericalanalysis
O
Occupiedband full band
Officienay power
Offset offset, misalignment
Onstandby standby state
Ohmiccontact
Opencircuit
Operatingpoint
Operatingbias
Operationalamplifier (OPAMP) operational amplifier
Opticalphoton=photon photon
Opticalquenching
Opticaltransition
Optical-coupledisolator
Organicsemiconductor
Orientation crystal orientation, orientation
Outline shape
Out-of-contactmask non-contact mask
Outputcharacteristic
Outputvoltageswing output voltage swing
Overcompensation
Over-current protection
Overshoot
Over-voltage protection
Overlap
Overload
Oscillator oscillator
Oxide
Oxidation
Oxidepassivation
P
Package package
Pad pressure welding point
Parameter
Parasiticeffect
Parasiticoscillation
Passination
Passivecomponent
Passivedevice passive device
Passivesurface passivation interface
Parasitictransistor
Peak-pointvoltage
Peakvoltage Peak voltage
Permanent-storagecircuit permanent storage circuit
Period
Periodictable
Permeable-base
Phase-lockloop
Phasedrift
Phononspectra phonon spectrum
Photoconduction
Photodiode
Photoelectriccell Photoelectric Cell
Photoelectric effect
Photoenicdevices
Photolithographicprocess
(photo)resist (photosensitive) anti-corrosion agent
Pin
Pinchoff
Pinning of Fermi level (effect)
Planarprocess
Planartransistor
Plasma
Plezoelectriceffect piezoelectric effect
Poissonequation
Pointcontact
Polarity
Polycrystal
Polymer semiconductor
Poly-silicon
Potential
Potentialbarrier
Potentialwell
Powerdissipation
Powertransistor power transistor
Preamplifier preamplifier
Primaryflat
Principalaxes
Print-circuitboard (PCB) printed circuit board
Probability
Probe
Process
Propagationdelay transmission delay
Pseudopotentialmethod is emerging
Punchthrough
Pulsetriggering/modulating Pulse triggering/modulating Pulse
WidenModulator (PWM) pulse width modulation
Punchthrough
Push-pullstage
Q
Qualityfactor
Quantization
Quantum
Quantumefficiency quantum effect
Quantummechanics
Quasi-Fermi-level Quasi-Fermi-level
Quartz quartz
R
Radiationconductivity
Radiation damage
Radiationfluxdensity
Radiationhardening
Radiationprotection
Radiative-recombination
Radioactive
Reachthrough
Reactivesputteringsource
Readdiode
Recombination
Recoverydiode recovery diode
Reciprocallattice
Recoverytime recovery time
Rectifier (tube)
Rectifyingcontact
Reference reference point
Refractiveindex
Register
Registration alignment
Regulate control adjustment
Relaxationlifetime
Reliability
Resonance
Resistance
Resistor
Resistivity
Regulator
Relaxation
Resonantfrequency
Responsetime
Reverse
Reversebias
S
Samplingcircuit sampling circuit
Sapphire Sapphire (Al2O3)
Satellitevalley
Saturatedcurrentrange current saturation area
Saturationregion
Saturation
Scaleddown scaled down
Scattering
Schockleydiode
Schottky Schottky
Schottkybarrier Schottky barrier
Schottkycontact Schottkycontact
Schrodingen
Scribinggrid
Secondaryflat
Seedcrystal
Segregation
Selectivity
Selfaligned
Selfdiffusion
Semiconductor
Semiconductor-controlledrectifier SCR
Sendsitivity sensitivity
Serial serial / serial
Seriesinductance series inductance
Settletime establishment time
Sheetresistance sheet resistance
Shield shield
Shortcircuit
Shotnoise
Shunt diversion
Sidewallcapacitance
Side wall capacitor Signal signal
Silicaglass quartz glass
Silicon
Siliconcarbide silicon carbide
Silicondioxide (SiO2)
SiliconNitride (Si3N4) Silicon Nitride
SiliconOnInsulator
Siliverwhiskers
Simplecubic
Singlecrystal
Sink Shen
Skineffect
Snaptime sudden change time
Sneakpath sneak path
Sulethreshold subthreshold
Solarbattery/cell solar cell
Solidcircuit
SolidSolubility
Sonband subband
Source
Sourcefollower
Spacecharge
Specificheat (PT) heat
Speed-powerproduct Spherical spherical
Spin Spin Split
Spontaneousemission spontaneous launch
Spreadingresistance
Sputter Sputtering Stackingfault Stacking fault
Staticcharacteristic
Stimulated emission
Stimulatedrecombination stimulated recombination
Storagetime storage time
Stress
Straggle deviation
Sublimation
Substrate
Substitutional
Superlattice
Supply Power Surface
Surgecapacity
Subscript subscript
Switching time
Switch switch
T
Tailing extension
Terminal
Tensor tensorTensorial tensor
Thermalactivation
Thermalconductivity
Thermalequilibrium
ThermalOxidation
Thermalresistance
Thermalsink heat sink
Thermalvelocity
Thermoelectricpovoer temperature difference electromotive force rate
Thick-filmtechnique
Thin-filmhybridIC
Thin-FilmTransistor (TFT) thin film crystal
Threshlod threshold
Thyistor
Transconductance
Transfercharacteristic
Transferelectron
Transferfunction Transient
Transistoraging (stress) transistor aging
Transittime transit time
Transition
Transition-metalsilica Transition-metalsilica
Transitionprobability
Transitionregion
Transport Transverse
Trap trapping trapping
Trappedcharge
Trianglegenerator Triangle wave generator
Triboelectricity
Trigger
Trim adjustment
Triplediffusion
Truthtable truth table
Tolerahce tolerance
Tunnel(ing)
Tunnelcurrent
Turnover
Turn-offtime
U
Ultraviolet
Unijunction
Unipolar
Unitcell original (meta) cell
Unity-gainfrequency
Unilateral-switch unilateral switch
V
Vacancy Vacancy Vacuum
Valence(value)band price band Valuebandedge price band top
Valencebond valence bond Vapourphase vapor phase
Varactor Varistor Varistor
Vibration Vibration Voltage
W
Wafer chip
Waveequation wave equation
Waveguide
Wavenumber
Wave-particle duality
Wear-out burned
Wirerouting
Workfunction
Worst-case device Worst-case device
Y
Yield yield
Z
Zenerbreakdown
Zonemelting
Babbitt wire is with tin as the base, the product is added with certain amount of antimony, copper
or other improved elements.
Sn Sb7Cu3 Babbit metal is suitable for metal spraying on the end face of metalized ï¬lm capacitor. With strong adhesive force, good weldability and low loss angle, it is an ideal metal spraying material for laminated capacitor.
Other trade marks are suitable to use CMT, TIG and MIG technology to manufacture sliding bearing bush material layer. It is of high bonding strength with substrate, with material utilization rate of 70~80%. It has small amount of ingredient segregation without any loose or slag inclusion. The internal control standard of the alloy composition is prevailing over GB/T8740-2013. Babbi1 metal added with improved elements can substantially enhance the service life.
Snsbcu Babbitt Wire,Overlaying Materials,Thermal Spray Babbitt Wire,Babbitt Wire
Shaoxing Tianlong Tin Materials Co.,Ltd. , https://www.tianlongspray.com