Letting costs fall and technology mature is the whole industry chain. The upper, middle and lower reaches of the LED industry chain are for epitaxial materials and chip processing, product devices and module packaging, display and lighting applications.
LED epitaxial wafers and chips account for about 70% of the industry's profits, LED packaging accounts for about 10% to 20%, and LED applications account for about 10% to 20%. Statistics show that there are more than 3,000 semiconductor lighting manufacturers in China, 70% of which are concentrated in the downstream of the industry. Domestic LED epitaxial materials and chips are mainly in the middle and low range, and more than 80% of power LED chips and devices are imported.
In recent years, the government has built a number of LED lighting industry bases in the form of peppers, but China's LED industry fever is still at the expense of 70% of the Chinese people competing for 10% to 20% of the LED's profit share. This means that if foreign companies that control the core technology of LEDs are not eager to lower the cost of LEDs, Chinese LED manufacturers who are stuck downstream of LEDs can only achieve low prices at the expense of their own profits and let the market heat up, but there is no technical support downstream. Products, even if the price is cheaper, how many people dare to use it.
In addition, in addition to its own technology, specifications, heat dissipation and price factors, CFL energy-saving lamps and fluorescent lamp technology are also developing. The luminous efficiency of T5 lamps in office lighting systems has reached the level of 100lm/W. CFL energy-saving lamps also have 3W ultra-small products. From the current cost-effectiveness of LEDs and energy-saving lamps, the popularity of LED lighting still has a long way to go.
Due to the relatively low capital and technical requirements for downstream packaging and applications, more than 80% of LED companies in China currently only have low-end packaging services; while upstream industries such as LED chips and epitaxial wafers have high technical and capital requirements, There are fewer companies involved, and development is relatively lagging behind. Since the equipment accounts for nearly 2/3 of the total cost of LED production, this is also the main reason why LED products are difficult to reduce. On January 8, 2010, the first self-developed MOCVD equipment in China was launched in Guangdong Zhaoxin Semiconductor Equipment Manufacturing Co., Ltd., and will enter the mass production phase after the next four months of data testing.
It is understood that buffered distributed injection reaction chamber, integrated ALD and CVD process technology and MOCVD electric field assisted growth are innovations of Zhaoxin Semiconductor's MOCVD equipment. The BDS reaction chamber is used to absorb the laminar flow of the planetary reaction chamber through the combination of the central radiation flow and the vertical spray flow, thereby eliminating the complex movement required by the planetary reaction chamber. The airflow mode can accurately realize the instantaneous switching of the reaction gas, and the switching of the reaction gas source from continuous to pulse injection can be realized while keeping the flow field of the cavity unchanged. The heating furnace body adopts multi-zone resistive film infrared radiation heating mode, and each heating zone can be independently controlled, which can realize uniform control of large-area temperature and obtain a wider range of heating temperature zones. The control system adopts the network architecture to realize real-time control of sensors and actuators; the sensitivity of real-time performance is designed according to different epitaxial processes to ensure the repeatability and stability of production.
Crystal Energy Optoelectronics, which is based in Nanchang to develop GaN-on-SiMOCVD growth technology, has recently developed a cold white LED with 1×1mm chip, which has a light output of more than 100 lumens at 350mA. At present, most LEDs are produced by depositing a multilayer GaN film on a sapphire or silicon carbide substrate. According to Crystal Energy, LEDs based on silicon substrate growth will have greater potential for cost savings and control, and performance is minimal. Unlike LEDs made by traditional processes, the company's high-power InGaN LEDs based on silicon substrates are close to LEDs grown with conventional substrates. It is reported that the company's current small-sized die (200micron) used in the display field has entered the mass production stage.
As China's governments at all levels regard LED lighting as a new economic growth point, and China's own technological advancement, overseas LED investors who have entered China in the future are beginning to touch high-end technology projects. Recently, Xu Rui Optoelectronics Co., Ltd. invested a total of 350 million US dollars LED epitaxial chip project in Foshan Nanhai Economic Development Zone. Professional design and production of LED epitaxial, high-brightness and high-power chips. It is expected that after the completion of the third phase of investment in 2013, Xurui Optoelectronics will have more than 100 MOCVD machines capable of simultaneously producing 4-inch and 6-inch LED epitaxial wafers and high power. The high-brightness LED chip has a luminous efficiency of more than 135lm/W, and has a monthly output of 380 million LED chips after full production.
It is reported that the main shareholder of Xurui Optoelectronics - US SemiLED (Xu Ming Optoelectronics), is the only company in the world that can mass produce metal pedestal vertical structure chips.
Compared with other LED products, the metal pedestal vertical structure LED has better electrical and thermal conductivity, can increase brightness and luminous efficiency, and belongs to the next generation of general illumination LED technology.
The government's first application is the driving force behind the industrialization of LED lighting technology. According to Li Wenbo, deputy director of the Putuo District Science and Technology Commission in Shanghai, the Shanghai LED Semiconductor Lighting R&D Application Center, which was built in Shanghai Putuo District in September 2006, is based on the “Government Guidance, Social Participation, and Enterprise-based†operation management model. Work in four aspects: testing and testing, demonstration bases and industrial agglomeration. At present, the center has successfully built an LED inspection and inspection platform, actively promoted the establishment and implementation of LED standards; successfully built the “Suzhou River Coast Landscape Lighting Application Projectâ€, “Putuo District Government Office Garden Lighting Reconstruction Application Project†and “Putuo District†The first batch of three LED application demonstration (test) bases, such as the library's new indoor lighting application project. Li Wenbo said that in October 2009, the National Development and Reform Commission and the Ministry of Science and Technology and the Ministry of Finance and other six ministries and commissions issued the "Opinions on Energy-saving Development of Semiconductor Lighting", which established a clear development direction for China's semiconductor lighting industry. Shanghai will take the lead in applying LED technology and build the Shanghai LED Application Center into an open LED public service platform serving Shanghai, the Yangtze River Delta and even the whole country, with a view to accelerating the process of LED lighting applications.
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