Corning announces precision glass solutions

Corning Incorporated (NYSE: GLW) recently unveiled its new business of precision glass solutions and other advanced optical materials and technologies at the 2017 China International Optoelectronics Expo in Shenzhen, China, from September 6th to 9th. Corning Precision Glass Solutions offers industry-leading glass wafer and panel solutions to help customers meet increasingly demanding features and form factors in semiconductor, consumer electronics and IoT applications. The fastest growing areas for glass applications include RF front-end modules for high-speed mobile communications, back-end packaging for semiconductor manufacturing, wafer-level optical products for 3D sensors, optics for augmented reality devices, and wafer-level capping solutions for consumer electronics And a variety of micro-electro-mechanical system devices. The precision glass solution utilizes Corning's more than 160 years of professional glass production technology combined with industry leading strength in its material growth field. Through the development and manufacture of coatings, flatness measurement data analysis, precision laser cutting and surface treatment including etching, Corning Precision Glass Solutions creates unparalleled value for our customers. David Velasquez, global vice president and business director of Corning Precision Glass Solutions, said: "The application of glass in the field of electronic technology is growing rapidly. Corning has established this special business to help customers quickly transform from traditional materials to glass materials. "We have a global operating network and a business team consisting of a large number of industry experts from Corning China, Taiwan, Korea, Japan, Europe and the United States. We have achieved a 'one stop from glass design to glass product supply." "Services." Moreover, as China invests heavily in semiconductor manufacturing, the business will further develop to meet the growing industry demand," Velasquez said. In addition to supplying components for semiconductor integrated circuits, Corning also provides major optical components for domestic semiconductor lithography machines, large astronomical telescopes, and other government optical projects. These applications require high quality optical transmission characteristics that are required by Corning® HPFS high purity fused silica glass and Corning® ULE ultra low expansion glass. Corning Advanced Optics is maximizing the use of its existing facilities to expand glass capacity to meet the optical industry's demand for HPFS high purity fused silica glass and ULE ultra-low expansion glass products, including both Asian customers and Asia. The needs of customers outside the region. Today, Corning Advanced Optics is one of the largest companies in the industry to produce HPFS high purity fused silica glass and ULE ultra low expansion glass. At the same time, Corning Advanced Optics also manufactures smaller, higher value optical components such as glass rods, wafers and lenses, and offers a wider range of additional services, including optical polishing, optical coating and product supply chain management.

Extended reading:

"The Glass Substrate Manufacturing Market in the Semiconductor Field - 2017 Edition"

SCHOTTKY

The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.

Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.


the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.

The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.

Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.

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Changzhou Changyuan Electronic Co., Ltd. , https://www.cydiode.com

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